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| CMT09N20 POWER MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ! ! ! ! ! Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PIN CONFIGURATION TO-220 SYMBOL D Top View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number CMT09N20N220 Package TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed (Note 1) Gate-to-Source Voltage Continue Total Power Dissipation Derate above 25 Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt Operating and Storage Temperature Range Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds EAS IAR EAR dv/dt TJ, TSTG JC JA TL Symbol ID IDM VGS PD Value 9.0 36 20 74 0.59 56 9.0 7.4 5.0 -55 to 150 1.70 62 300 V W W/ mJ A mJ V/ns /W Unit A 2002/09/17 Preliminary Champion Microelectronic Corporation Page 1 CMT09N20 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT09N20 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 200V, VGS = 0 V) (VDS = 160V, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.4A) (Note 4) Forward Transconductance (VDS = 50V, ID = 5.4 A) (Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 160V, ID = 5.9A VGS = 10 V) (Note 4) (VDD = 100 V, ID = 5.9 A, RG = 12, RD = 16) (Note 4) (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Symbol V(BR)DSS IDSS 25 250 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 4.5 7.5 3.8 800 240 76 9.4 28 39 20 43 7.0 23 2.0 100 -100 4.0 0.40 nA nA V mhos pF pF pF ns ns ns ns nC nC nC nH nH Min 200 Typ Max Units V A Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage IF = 5.9A, di/dt = 100A/s , TJ = 25 (Note 4) IS = 9.0A, VGS = 0 V, TJ = 25 (Note 4) Qrr ton trr VSD 1.1 ** 170 2.2 340 1.5 C ns V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 100V, VGS = 10V , starting TJ = 25, L=1.38mH, RG = 25, IAS = 9.0A (3) ISD 9.0A, di/dt 120A/s, VDD V(BR)DSS, TJ 150 (4) Pulse Test: Pulse Width 300s, Duty Cycle 2% ** Negligible, Dominated by circuit inductance 2002/09/17 Preliminary Champion Microelectronic Corporation Page 2 CMT09N20 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2002/09/17 Preliminary Champion Microelectronic Corporation Page 3 CMT09N20 POWER MOSFET 2002/09/17 Preliminary Champion Microelectronic Corporation Page 4 CMT09N20 POWER MOSFET 2002/09/17 Preliminary Champion Microelectronic Corporation Page 5 CMT09N20 POWER MOSFET 2002/09/17 Preliminary Champion Microelectronic Corporation Page 6 CMT09N20 POWER MOSFET PACKAGE DIMENSION TO-220 D A c1 F E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e1 e b A1 c Side View L1 Front View 2002/09/17 Preliminary Champion Microelectronic Corporation Page 7 CMT09N20 POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for Use of CMC products in such applications is In order to minimize risks associated with the customer's applications, the use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2002/09/17 Preliminary Champion Microelectronic Corporation Page 8 |
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